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MC74HC165A_05 Datasheet, PDF (3/12 Pages) ON Semiconductor – 8−Bit Serial or Parallel−Input/ Serial−Output Shift Register High−Performance Silicon−Gate CMOS | |||
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MC74HC165A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin DC Input Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout DC Output Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
DC Input Current, per Pin
± 20
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout DC Output Current, per Pin
± 25
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC DC Supply Current, VCC and GND Pins
± 50
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD Power Dissipation in Still Air
Plastic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TSSOP Packageâ
450
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Plastic DIP, SOIC or TSSOP Package)
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum ratings are those values beyond which device damage can occur. Maximum ratings
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
2.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout DC Input Voltage, Output Voltage (Referenced to
0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA Operating Temperature, All Package Types
â 55
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf Input Rise and Fall Time
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figure 1)
VCC = 2.0 V
0
VCC = 3.0 V
0
VCC = 4.5 V
0
VCC = 6.0 V
Max
6.0
VCC
Unit
V
V
+ 125 _C
1000 ns
600
500
400
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
Guaranteed Limit
VCC
V â 55 to 25_C v 85_C v 125_C Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIH Minimum HighâLevel Input Vout = 0.1 V or VCC â 0.1 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
|Iout| v 20 mA
2.0
1.5
3.0
2.1
4.5
3.15
6.0
4.2
1.5
1.5
V
2.1
2.1
3.15
3.15
4.2
4.2
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIL Maximum LowâLevel Input Vout = 0.1 V or VCC â 0.1 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
|Iout| v 20 mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOH Minimum HighâLevel Output Vin = VIH or VIL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
|Iout| v 20 mA
2.0
0.5
3.0
0.9
4.5
1.35
6.0
1.80
2.0
1.9
4.5
4.4
6.0
5.9
0.5
0.5
V
0.9
0.9
1.35
1.35
1.80
1.80
1.9
1.9
V
4.4
4.4
5.9
5.9
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin = VIH or VIL |Iout| v 2.4 mA 3.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ |Iout|v 4.0 mA 4.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ |Iout|v5.2mA 6.0
2.48
3.98
5.48
2.34
2.20
V
3.84
3.70
5.34
5.20
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