MC74HC10A_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – Triple 3-Input NAND Gate

MC74HC10A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
V_IH
Minimum High−Level Input
Voltage
V_out = 0.1 V or V_CC – 0.1 V
|I_out| v 20 μA
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V_IL
Maximum Low−Level Input
Voltage
V_out = 0.1 V or V_CC – 0.1 V
|I_out| v 20 μA
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V_OH
Minimum High−Level Output
Voltage
V_in = V_IH or V_IL
|I_out| v 20 μA
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
6.0
5.9
5.9
5.9
V_in = V_IH or V_IL |I_out| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
|I_out| v 5.2 mA 6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
V_OL
Maximum Low−Level Output
Voltage
V_in = V_IH
|I_out| v 20 μA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
V_in = V_IH or V_IL |I_out| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
|I_out| v 5.2 mA 6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I_in
Maximum Input Leakage Current V_in = V_CC or GND
6.0
± 0.1
± 1.0
± 1.0
μA
I_CC
Maximum Quiescent Supply
Current (per Package)
V_in = V_CC or GND
I_out = 0 μA
6.0
1
10
40
μA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)}
Guaranteed Limit
Symbol
Parameter
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
t_PLH,
t_PHL
Maximum Propagation Delay, Input A, B, or C to Output Y
(Figures 1 and 2)
2.0
95
3.0
45
4.5
19
6.0
16
120
145
ns
60
75
24
29
20
25
t_TLH,
t_THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
75
3.0
30
4.5
15
6.0
13
95
110
ns
40
55
19
22
16
19
C_in
Maximum Input Capacitance
—
10
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD
Power Dissipation Capacitance (Per Gate)*
25
pF
* Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC.
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