EFC4630R Datasheet, PDF (3/6 Pages) ON Semiconductor – N-Channel Power MOSFET

EFC4630R
Test circuits are example of measuring FET1 side
Test Circuit 1
ISSS
Test Circuit 2
IGSS
S2
G2
A
S2
G2
G1
S1
Test Circuit 3
VGS(th)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
S1
Test Circuit 5
RSS(on)
S2
G2
VSS
A
VSS
IS
G1
A
VGS
S1
Test Circuit 4
gFS
S2
G2
G1
VGS
S1
Test Circuit 6
td(on), tr, td(off), tf
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
A
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
RL
G1
VGS
V
S1
Test Circuit 7
Qg
G1
S1
PG
Test Circuit 8
VF(S-S)
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
IG =1mA
G1
S2
A
RL
S2
G2
VGS=0V ^G1
S1
S1
PG
VSS
When FET2 is measured, the position of FET 1 and FET 2 is switched.
V
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
IS
V
When FET1 is
measured,+4.5V is added to
VGS of FET2.
No.A2320-3/6