EFC4630R Datasheet, PDF (2/6 Pages) ON Semiconductor – N-Channel Power MOSFET

EFC4630R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source-to-Source Voltage
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
See specified Test Circuit. Test Circuit 6
VSS=10V, VGS=4.5V, IS=6A Test Circuit 7
IS=3A, VGS=0V
Test Circuit 8
Value
Unit
min
typ
max
24
V
1
mA
±10
mA
0.5
1.3
V
3.1
S
24
39
45 mW
25
41
48 mW
27.5
43
50 mW
31.5
48
57 mW
33.5
58
72 mW
20
ns
230
ns
130
ns
210
ns
7
nC
0.8
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering Information
Device
EFC4630R-TR
Package
EFCP
Shipping
5,000pcs./reel
memo
Pb-Free and Halogen Free
No.A2320-2/6