CS2082 Datasheet, PDF (3/12 Pages) ON Semiconductor – Dual Airbag Deployment ASIC

CS2082
MAXIMUM RATINGS*
Rating
Storage Temperature
V_BAT
V_RES
V_CC
ESD Susceptibility (Human Body Model)
Power Dissipation (Non–Firing)
Power Dissipation (Both Firing Loops With Squibs Shorted)
Power Dissipation (Squib Resistance Measurement)
Peak Transient Voltage (46 V Load Dump @ 14 V V_BAT)
Lead Temperature Soldering:
1. 60 second maximum above 183°C.
*The maximum package power dissipation must be observed.
Value
Unit
–40 to 150
°C
–0.3 to 24
V
–0.3 to 30
V
–0.3 to 6.0
V
500
V
0.15
W
140
W
1.6
W
60
V
Reflow: (SMD styles only) (Note 1) 230 peak
°C
ELECTRICAL CHARACTERISTICS (4.75 V < V_CC < 5.25 V, 8.0 V < V_RES < 30 V, 9.0 V < V_BAT < 18 V,
–40°C < T_A < +85°C; unless otherwise stated.)
Parameter
Test Conditions
Min
Typ
Supply Requirements
V_CC Quiescent Current
V_BAT Quiescent Current
V_BAT Measurement Current
V_RES Quiescent Current
V_RES Firing Current
Power on Reset
Power Reset Active Voltage
Power Reset Off Voltage
Hysteresis
V_CC = 5.25 V
V_BAT = 18 V
V_BAT = 18 V, R_SQUIB = 1.0 Ω
V_RES = 30 V
V_RES = 30 V
V_BAT = 9.0 V, V_RES = 10 V
V_CC Falling
V_CC Rising
–
–
2.0
–
2.5
–
–
–
–
–
–
3.50
4.00
3.65
4.20
50
–
Low Side Driver
Saturation Voltage
V_RES = 8.0 V = V_RX, V_CC = 5.0 V, V_BAT = 8.0 V
I = 1.2 A
–
–
Current Limit (I_LIMIT)
Turn–on Delay Time
Turn–off Delay Time
High Side Driver
Saturation Voltage
V_SLX – V_FGX = 5.0 V
1.2
1.6
From CS falling Edge, I_D = 0.9 × I_LIMIT(MIN)
–
–
From CS falling Edge, I_D = 0.1 × I_LIMIT(MIN)
–
–
V_RES = 8.0 V = V_RX, V_CC = 5.0 V, V_BAT = 8.0 V
I = 1.2 A
–
–
Current Limit (I_LIMIT)
V_RX – V_SHX = 5.0 V
1.2
2.0
V_R1 Quiescent Current Drivers off V_RX = V_RES = 30 V
–
–
V_R2 Quiescent Current Drivers off V_RX = V_RES = 30 V
–
–
Turn–on Delay Time
From CS falling Edge, I_D = 0.9 × I_LIMIT(MIN)
–
–
Turn–off Delay Time
From CS falling Edge, I_D = 0.1 × I_LIMIT(MIN)
–
–
Thermal Shut Down
Thermal Shutdown Temp
Guaranteed by Design
150
180
Thermal Hysteresis
Guaranteed by Design
30
40
Max
Unit
4.0
mA
5.0
mA
80
mA
1.0
mA
3.0
mA
4.25
V
4.50
V
–
mV
1.8
V
2.0
A
75
µs
25
µs
1.8
V
2.5
A
1.0
mA
100
µA
100
µs
25
µs
210
°C
60
°C
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