CPH6429 Datasheet, PDF (3/4 Pages) ON Semiconductor – Ultrahigh-Speed Switching Applications

CPH6429
10
7 ^VDS=10V
5
3
2
1.0
7
5
3
2
yfs -- ID
Ta= ^--25°C
25^°C
75^°C
0.1
0.01
100
7
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT06816
VDD=30V
VGS=4V
5
td(off)
3
tf
2
tr _td(on)
10
7
5
0.1
2
4
VDS=30V
ID=2.0A
3
5 7 _1.0
2
Drain Current, ID -- A
VGS -- Qg
3
5
IT06818
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Total Gate Charge, Qg -- nC
IT06820
PD -- Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Mounted _{on a ceramic board (1200mm 2✕0.8mm)}
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07337
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
3
2
IF -- VSD
VGS=0
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT06817
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
Coss
3
Crss
2
10
7
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT06819
ASO
10
7
5
IDP=8A
<10µs
3
2
ID=2A
1.0
7
5
3
2
0.1
Operation in this area
7
5
is limited by RDS(on).
3 _Ta=25°C
2 _{Single pulse}
0.01 ^{Mounted on a ceramic board (1200mm2✕0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7100}
Drain-to-Source Voltage, VDS -- V IT07336
Rev.0 I Page 3 of 4 I www.onsemi.com