CPH6429 Datasheet, PDF (2/4 Pages) ON Semiconductor – Ultrahigh-Speed Switching Applications

CPH6429
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
VDS=30V, VGS=4V, ID=2A
IS=2A, VGS=0
Ratings
Unit
min
typ
max
4.2
nC
1.1
nC
1.1
nC
0.86
1.2
V
Package Dimensions
unit : mm
2151A
2.9
6 54
0.15
0.05
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=1A
RL=30Ω
D
VOUT
CPH6429
P.G
50Ω
S
ID -- VDS
2.0
1.8
1.6
1.4
1.2
1.0
VGS=1.5V
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS
500
Ta=25°C
ID=1.0A
400
300
200
100
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT06814
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
400
350
300
250
200
150
I D=I _{D1A=1, AV,GVS=G2S.=5V4.0V}
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06815
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