CM6116 Datasheet, PDF (3/4 Pages) ON Semiconductor – Single-Channel Transient Voltage Suppressor

T_A = 255C, 50 W Environment
0 dB
−10 dB
−20 dB
−30 dB
CM6116
RF CHARACTERISTICS
5V
0V
−40 dB
−50 dB
3
10
100
1000
FREQUENCY (MHz)
Figure 1. Insertion Loss (0 V and 5 V Bias)
2000 6000
MECHANICAL SPECIFICATION
Table 5. VERTICAL STRUCTURE DIMENSIONS (nominal)
Ref.
Parameter
Material
Dimension
a Die Thickness
Silicon
406 mm
b Bump Standoff
194 mm
UBM−(Ti/Cu)
Plated Cu
7 mm
d
Sputtered Cu
0.4 mm
Sputtered Ti
0.1 mm
e
UBM Wetting Area
Diameter
240 mm
f
Solder Bump Diameter
after Bump Reflow
270 mm
c Metal Pad Height
AlSiCu
1.5 mm
g Metal Pad Diameter
284 mm
D2
0.406 mm
D1 Finished Thickness
0.600 mm
Vertical Structure Specification*
Figure 2. Sectional View
* Daisy Chain CM6008
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