CM6116 Datasheet, PDF (2/4 Pages) ON Semiconductor – Single-Channel Transient Voltage Suppressor

CM6116
ELECTRICAL SPECIFICATIONS AND CONDITIONS
Table 2. ABSOLUTE RATINGS
Parameter
Failing to Nonconductive, I²t (Maximum Ipp Value Using 10/1000 ms Pulse).
(Notes 1 and 2)
1. The device must not burn to open−circuit, when the value is below maximum I_PP.
2. This parameter is characterized at 25C using an ON Semiconductor−specific test board.
Rating
100
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Storage Temperature Range
Operating Temperature Range
Rating
−55 to +150
−30 to +85
Units
A
Units
C
C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
I_OFF Stand−Off Quiescent Current
V_BR Break Down Voltage
V_CL Clamping Voltage during Transient
Stand−Off Voltage V_OFF = 10 V
Break Down Current I_BR = 15 mA
Clamping Current I_CL = 1 A
(Note 3)
V_F
C_L1
C_L2
V_ESD
Forward Voltage
Line Capacitance
ESD Protection Peak Discharge
Voltage at any Channel Input
a) Contact Discharge per IEC 61000−4−2 Standard
b) Air Discharge per IEC 61000−4−2 Standard
Forward Current I_F = 850 mA
V_BIAS = 0 V
V_BIAS = 5 V, T_A = 25C;
T_A = 25C
(Note 2)
Minimum Attenuation
Freq = 80 MHz − 1 Ghz
Freq = 1 − 4 GHz
R_SOURCE = R_LOAD = 50 W
T_A = 25C
1. All parameters specified for T_A = −30C to 85C unless otherwise noted.
2. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W.
3. Transient: 8 x 20 ms current pulse.
Min Typ Max Units
500 nA
16
V
20
V
1.3
V
190
pF
73
92
pF
kV
30
30
dB
8
20
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