CM1402_11 Datasheet, PDF (3/8 Pages) ON Semiconductor – SIM Card EMI Filter Array ESD Protection

CM1402
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
R₁
Resistance of R₁
R₂
Resistance of R₂
C
Capacitance
80
100 120
W
38
47
56
W
VIN = 2.5 VDC, 1 MHz, 30 mV ac
16
20
24
pF
V_STANDOFF
I_LEAK
V_SIG
V_ESD
Stand−off Voltage
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per IEC 61000−4−2
I = 10 mA
V_BIAS = 3.3 V
I_LOAD = 10 mA
I_LOAD = −10 mA
(Notes 2 and 4)
6.0
V
0.1
1.0
mA
V
5.6
6.8
9.0
−1.5 –0.8 −0.4
kV
±25
±10
V_CL
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Notes 2, 3 and 4)
V
+12
−7
f_C1
Cut−off Frequency
Z_SOURCE = 50 W, Z_LOAD = 50 W
R = 100 W, C = 20 pF
MHz
77
f_C2
Cut−off Frequency
Z_SOURCE = 50 W, Z_LOAD = 50 W
R = 47 W, C = 20 pF
MHz
85
1. T_A = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
4. Unused pins are left open.
http://onsemi.com
3