CM1241_11 Datasheet, PDF (3/7 Pages) ON Semiconductor – 4-Channel Low Capacitance Dual-Voltage ESD Protection Array

CM1241
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
Parameter
Conditions
V_F
LV Diode Reverse Voltage
(Positive Voltage)
I_F = 10 mA; T_A = 25°C
LV Diode Forward Voltage
(Negative Voltage)
I_F = 10 mA; T_A = 25°C
I_LEAK
LV Channel Leakage Current
(Pins 1 and 2)
LV Channel Leakage Current
(Pin 3 only)
T_A = −30°C to 65°C; VIN = 3.3 V,
V_N = 0 V
T_A = −30°C to 65°C; VIN = 3.3 V,
V_N = 0 V
C_IN
ΔC_IN
LV Channel Input Capacitance
LV Channel Input Capacitance
Matching
At 1 MHz, V_N = 0 V, VIN = 1.65 V
At 1 MHz, V_N = 0 V, VIN = 1.65 V
I_{LEAK_HV}
C_{IN_HV}
V_{F_HV}
HV Channel Leakage Current
HV Channel Input Capacitance
HV Diode Breakdown Voltage
Positive Voltage
T_A = 25°C; V_CC = 11 V, V_N = 0 V
At 1 MHz, V_N = 0 V, VIN = 2.5 V
I_F = 10 mA; T_A = 25°C
V_ESD
V_CL
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000−4−2 standard
LV Channel Clamp Voltage (Pin 1−3)
Positive Transients
Negative Transients
T_A = 25°C
T_A = 25°C, I_PP = 1 A, t_P = 8/20 mS
R_DYN
Dynamic Resistance
LV Channel Positive Transients
LV Channel Negative Transients
HV Channel Positive Transients
HV Channel Negative Transients
I_PP = 1 A, t_P = 8/20 mS
Any I/O pin to Ground
1. All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Min
6.8
–1.05
14.6
Typ Max Units
8.2
9.2
V
–0.9 –0.6
V
100
nA
100
nA
1.2
1.5
pF
0.02
pF
0.1
1.0
mA
53
pF
17.7
V
kV
±8 (Pin 1−3)
±15 (Pin 4)
V
+9.64
–1.75
W
0.72
0.59
1.20
0.36
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