CM1215 Datasheet, PDF (3/9 Pages) California Micro Devices Corp – 1-, 2- and 4-Channel Low Capacitance ESD Arrays

CM1215
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Supply Voltage (V_P−V_N)
Diode Forward DC Current (Note 1)
6
V
20
mA
DC Voltage at any Channel Input
Operating Temperature Range
(V_N−0.5) to (V_P+0.5)
V
Ambient
−40 to +85
°C
Junction
−40 to +125
°C
Storage Temperature Range
−40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
SOT23−3 Package (CM1215−01SO)
SOT143 Package (CM1215−02SR)
SOT23−5 Package (CM1215−02SO)
SOT23−6 Package (CM1215−04SO)
Rating
–40 to +85
225
225
225
225
Units
°C
mW
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V_P
Operating Supply Voltage (V_P−V_N)
I_P
Operating Supply Current
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
(V_P−V_N) = 3.3 V
I_F = 20 mA; T_A = 25°C
3.3
5.5
V
8
mA
V
0.6
0.8
0.95
0.6
0.8
0.95
I_LEAK
Channel Leakage Current
T_A = 25°C; V_P = 5 V, V_N = 0 V
±0.1 ±1.0
mA
C_IN
Channel Input Capacitance
At 1 MHz, V_P = 3.3 V,
V_N = 0 V, V_IN = 1.65V;
1.6
2.0
pF
ΔC_IN
Channel I/O to GND Capacitance Difference
0.04
pF
C_MUTUAL Mutual Capacitance
(V_P−V_N) = 3.3 V
0.13
pF
V_ESD
ESD Protection
kV
Peak Discharge Voltage at any channel input, T_A = 25°C
±15
in system, contact discharge
(Notes 2 and 3)
per IEC 61000−4−2 standard
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
I_PP = 1 A, t_P = 8/20 mS;
T_A = 25°C;
V
V_P+1.5
V_N−1.5
R_DYN
Dynamic Resistance
Positive transients
Negative transients
I_PP = 1 A, t_P = 8/20 mS;
T_A = 25°C;
W
0.4
0.4
1. All parameters specified at T_A = −40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W, V_P = 3.3 V, V_N grounded.
3. From I/O pins to V_P or V_N only. V_P bypassed to V_N with low ESR 0.2 mF ceramic capacitor.
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