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CAV93C56 Datasheet, PDF (3/10 Pages) ON Semiconductor – 2 Kb Microwire Serial CMOS EEPROM
CAV93C56
Table 5. A.C. CHARACTERISTICS (Note 5)
(VCC = +2.5V to +5.5V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
tCSS
tCSH
tDIS
tDIH
tPD1
tPD0
tHZ (Note 6)
tEW
tCSMIN
tSKHI
tSKLOW
tSV
SKMAX
Parameter
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High−Z
Program/Erase Pulse Width
Minimum CS Low Time
Minimum SK High Time
Minimum SK Low Time
Output Delay to Status Valid
Maximum Clock Frequency
Limits
Min
50
0
100
100
0.25
0.25
0.25
DC
Max
0.25
0.25
100
5
0.25
2000
Units
ns
ns
ns
ns
ms
ms
ns
ms
ms
ms
ms
ms
kHz
Table 6. A.C. TEST CONDITIONS
Input Rise and Fall Times
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
Output Load
≤ 50 ns
0.4 V to 2.4 V
4.5 V v VCC v 5.5 V
0.8 V, 2.0 V
4.5 V v VCC v 5.5 V
0.2 VCC to 0.7 VCC
2.5 V v VCC v 4.5 V
0.5 VCC
2.5 V v VCC v 4.5 V
Current Source IOLmax/IOHmax; CL=100 pF
Table 7. POWER−UP TIMING (Notes 6 and 7)
Symbol
Parameter
Max
Units
tPUR
Power−up to Read Operation
1
ms
tPUW
Power−up to Write Operation
1
ms
5. Test conditions according to “A.C. Test Conditions” table.
6. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AEC−Q100 and JEDEC test methods.
7. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
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