CAV93C56 Datasheet, PDF (2/10 Pages) ON Semiconductor – 2 Kb Microwire Serial CMOS EEPROM

CAV93C56
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
−65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V_CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V_CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
N_END (Note 3) Endurance
1,000,000
Program / Erase Cycles
T_DR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Block Mode, V_CC = 5 V, 25°C
Table 3. D.C. OPERATING CHARACTERISTICS
(V_CC = +2.5 V to +5.5 V, T_A=−40°C to +125°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
I_CC1
Power Supply Current (Write)
I_CC2
Power Supply Current (Read)
I_SB1
Power Supply Current (Standby)
(x8 Mode)
V_CC = 5.0 V
f_SK = 2 MHz, V_CC = 5.0 V, DO open
V_IN = GND or V_CC,
CS = GND ORG = GND
I_SB2
I_LI
I_LO
V_IL1
V_IH1
V_IL2
V_IH2
V_OL1
V_OH1
V_OL2
V_OH2
Power Supply Current (Standby)
(x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V_IN = GND or V_CC,
CS = GND ORG = Float or V_CC
V_IN = GND to V_CC
V_OUT = GND to V_CC, CS = GND
4.5 V v V_CC < 5.5 V
4.5 V v V_CC < 5.5 V
2.5 V v V_CC < 4.5 V
2.5 V v V_CC < 4.5 V
4.5 V v V_CC < 5.5 V, I_OL = 3 mA
4.5 V v V_CC < 5.5 V, I_OH = −400 mA
2.5 V v V_CC < 4.5 V, I_OL = 1 mA
2.5 V v V_CC < 4.5 V, I_OH = −100 mA
Min
Max
Units
2
mA
500
mA
5
mA
3
mA
2
mA
2
mA
−0.1
0.8
V
2
V_CC + 1
V
0
V_CC x 0.2
V
V_CC x 0.7
V_CC + 1
V
0.4
V
2.4
V
0.2
V
V_CC − 0.2
V
Table 4. PIN CAPACITANCE (T_A = 25°C, f = 1 MHz, V_CC = 5 V)
Symbol
Test
Conditions
Min
Typ
Max
Units
C_OUT (Note 4) Output Capacitance (DO)
V_OUT = 0 V
5
pF
C_IN (Note 4)
Input Capacitance (CS, SK, DI, ORG)
V_IN = 0 V
5
pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
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