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CAV25020 Datasheet, PDF (3/12 Pages) ON Semiconductor – SPI Serial CMOS EEPROM
CAV25010, CAV25020, CAV25040
Table 5. A.C. CHARACTERISTICS (TA = −40°C to +125°C) (Note 4)
VCC = 2.5 V − 5.5 V
Symbol
Parameter
Min
Max
fSCK
Clock Frequency
DC
10
tSU
Data Setup Time
10
tH
Data Hold Time
10
tWH
SCK High Time
40
tWL
SCK Low Time
40
tLZ
HOLD to Output Low Z
25
tRI (Note 5)
Input Rise Time
2
tFI (Note 5)
Input Fall Time
2
tHD
HOLD Setup Time
0
tCD
HOLD Hold Time
10
tV
Output Valid from Clock Low
35
tHO
Output Hold Time
0
tDIS
Output Disable Time
20
tHZ
HOLD to Output High Z
25
tCS
CS High Time
40
tCSS
CS Setup Time
30
tCSH
CS Hold Time
30
tCNS
CS Inactive Setup Time
20
tCNH
CS Inactive Hold Time
20
tWPS
WP Setup Time
10
tWPH
WP Hold Time
10
tWC (Note 6)
Write Cycle Time
5
4. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 30 pF
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Units
MHz
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Table 6. POWER−UP TIMING (Notes 7, 8)
Symbol
Parameter
Min
tPUR
Power−up to Read Operation
0.1
tPUW
Power−up to Write Operation
0.1
7. This parameter is tested initially and after a design or process change that affects the parameter.
Max
Units
1
ms
1
ms
8. tPUR and tPUW are the delays required from the time VCC is stable at the operating voltage until the specified operation can be initiated.
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