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| CAT5140_13 Datasheet, PDF (3/10 Pages) ON Semiconductor – Single Channel 256 Tap Digital Potentiometer (POT) | |||
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CAT5140
Table 5. POTENTIOMETER CHARACTERISTICS (Note 3) (VCC = +2.5 V to +5.5 V, â40_C to +85_C unless otherwise specified.)
Limits
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Potentiometer Resistance ââ50â
Potentiometer Resistance ââ00â
Potentiometer Resistance Tolerance
RPOT
RPOT
50
kW
100
kW
ï±20
%
Power Rating
25ï°C
50
mW
Wiper Current
Wiper Resistance
Integral Non-Linearity
IW
IW = ï±3 mA
RW
VCC = 3.3 V
Voltage Divider Mode
INL
ï±3
mA
70
200
W
ï±1
LSB (Note 4)
Differential Non-Linearity
DNL
ï±0.5
LSB (Note 4)
Integral Non-Linearity
Resistor Mode
RINL
ï±1
LSB (Note 4)
Differential Non-Linearity
RDNL
ï±0.5
LSB (Note 4)
Voltage on RH or RL
Resolution
VSS = 0 V
VTERM
VSS
VCC
V
0.4
%
Zero Scale Error
0
0.5
2
LSB (Note 5)
Full Scale Error
â2
â0.5
0
LSB (Note 5)
Temperature Coefficient of RPOT
(Notes 6, 7)
TCRPOT
ï±100
ppm/ï°C
Ratiometric Temp. Coefficient
(Notes 6, 7)
TCRATIO
20
ppm/ï°C
Potentiometer Capacitances
(Notes 6, 7)
CH/CL/CW
10/10/25
pF
Frequency Response
RPOT = 50 kW (Note 8)
fc
0.4
MHz
3. Latch-up protection is provided for stresses up to 100 mA on address and data pins from â1 V to VCC +1 V.
4. LSB = RTOT / 255 or (RH â RL) / 255, single pot.
5. V(RW)255âV(RW)0]/255 (RW)255 = 0xFF, (RW)0 = 0x00.
6. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
7. Relative linearity is a measure of the error in step size. It is determined by the actual change in voltage between two successive tap positions
when used as a potentiometer.
8. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. D.C. OPERATING CHARACTERISTICS (VCC = +2.5 V to +5.5 V, â40ï°C to +85ï°C unless otherwise specified.)
Parameter
Test Conditions
Symbol
Min
Max
Units
Power Supply Current
Volatile Write & Read
fSCL = 400 kHz
VCC = 5.5 V, Inputs = GND
ICC1
1
mA
Power Supply Current
Non-volatile Write
Standby Current
Input Leakage Current
Output Leakage Current
fSCL = 400 kHz
VCC = 5.5 V, Inputs = GND
ICC2
3
mA
VCC = 5.0 V
ISB
2
mA
VIN = GND to VCC
ILI
â10
+10
mA
VOUT = GND to VCC
ILO
10
mA
Input Low Voltage
Input High Voltage
SDA Output Buffer Low Voltage
Power-On Recall
VIL
â1
VCC x 0.3
V
VIH
VCC x 0.7
VCC + 1.0
V
VCC = 2.5 V, IOL = 4 mA
VOL1
0.4
V
Minimum VCC for memory recall
VPOR
1.4
2.0
V
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