BCP69T1 Datasheet, PDF (3/4 Pages) Motorola, Inc – MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP69T1
TYPICAL ELECTRICAL CHARACTERISTICS
200
100
70
50
V_CE = -1.0 V
T_J = 25°C
300
200
100
V_CE = -10 V
70
T_J = 25°C
f = 30 MHz
50
20
-10
-100
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
T_J = 25°C
- 0.8
V_(BE)sat @ I_C/I_B = 10
- 0.6
V_(BE)on @ V_CE = -1.0 V
- 0.4
-1000
- 0.2
V_(CE)sat @ I_C/I_B = 10
0-1.0
-10
-100
-1000
I_C, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
30-10
-100
I_C, COLLECTOR CURRENT (mA)
-1000
Figure 2. Current Gain Bandwidth Product
160
T_J = 25°C
120
80
40
0
C_ob
C_ib
C_ib
Cob
- 5.0
-1.0
-1.5
- 2.0
- 2.5
-1.0
- 2.0
- 3.0
- 4.0
- 5.0
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
10
10 ms
1 s ^{100 ms}
1 ms
1.0
Thermal Limit
 0.1
Single Pulse Test
@ T_A = 25°C
0.01
0.1
1.0
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
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