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BCP69T1 Datasheet, PDF (2/4 Pages) Motorola, Inc – MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
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BCP69T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Collector−Base Cutoff Current (VCB = − 25 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CES
− 25
−
V(BR)CEO
− 20
−
V(BR)EBO
− 5.0
−
ICBO
−
−
IEBO
−
−
−
Vdc
−
Vdc
−
Vdc
−10
mAdc
−10
mAdc
DC Current Gain
(IC = − 5.0 mAdc, VCE = −10 Vdc)
(IC = − 500 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 Adc, VCE = −1.0 Vdc)
hFE
50
85
60
Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
−
Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc)
VBE(on)
−
DYNAMIC CHARACTERISTICS
−
−
−
−
375
−
−
−
− 0.5
Vdc
−
−1.0
Vdc
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc)
fT
−
60
−
MHz
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