BCP53-10T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistors

BCP53 Series, SBCP53 Series
TYPICAL CHARACTERISTICS
2.0
IC/IB = 10
1.8
1.6
BCP53, −10, −16
+150°C
1.4
−55°C
1.2
1.0
+25°C
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
180
150°C, 5 V
160
150°C, 2 V
140
120
25°C, 5 V
100
25°C, 2 V
80
60
−55°C, 5 V
40
−55°C, 2 V
20
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current (BCP53−10)
200
150°C, 5 V
180
150°C, 2 V
160
140
25°C, 5 V
120
25°C, 2 V
100
80
−55°C, 5 V
60
−55°C, 2 V
40
20
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
300
150°C, 5 V
250
150°C, 2 V
200
25°C, 5 V
150
25°C, 2 V
100
−55°C, 5 V
−55°C, 2 V
50
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain vs. Collector
Current (BCP53−16)
1.2
IC/IB = 10
1.1
BCP53, −10
1.2
IC/IB = 10
1.1
BCP53 −16
1.0
1.0
0.9
−55°C
0.8
0.9
−55°C
0.8
0.7
0.6 ^+25°C
0.7
+25°C
0.6
0.5
0.4 ^+150°C
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. BCP53, −10 Base Emitter Saturation
Voltage vs. Collector Current
0.5
0.4 ^+150°C
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. BCP53−16 Base Emitter Saturation
Voltage vs. Collector Current
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