BC636 Datasheet, PDF (3/4 Pages) Motorola, Inc – High Current Transistors

BC636, BC636–16, BC638, BC640, BC640–16
-1000
-500
SOA = 1S
-200 _{PD TA 25°C}
-100
-50
-20
-10
-5
-2
-1
-1
PD TC 25°C
PD TA 25°C
PD TC 25°C
BC636
BC638
BC640
-2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
500
VCE = -2 V
-B
200
-A
100
-L
50
20
-1
-3 -5 -10
-30 -50 -100 -300 -500 -1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
500
-1
300
VCE = -2 V
100
50
20
-1
-10
-100
-1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Bandwidth Product
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -2 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-1
-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
Figure 4. “Saturation” and “On” Voltages
-0.2
-1.0
-1.6
-2.2
-1
VCE = -2 VOLTS
∆T = 0°C to +100°C
θ_V for VBE
-3 -5 -10
-30 -50 -100 -300 -500 -1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
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