BC636 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Current Transistors

BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC636
BC638
BC640
Collector-Base Voltage
BC636
BC638
BC640
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
R_θJA
R_θJC
Value
Unit
Vdc
–45
–60
–80
Vdc
–45
–60
–80
–5.0
Vdc
–0.5
Adc
625
mW
5.0
mW/°C
1.5
12
–55 to
+150
Watts
mW/°C
°C
Max
Unit
200
°C/W
83.3
°C/W
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
1
23
CASE 29
TO–92
STYLE 14
ORDERING INFORMATION
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92 2000/Ammo Pack
BC636–16ZL1
TO–92 2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92 2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92 2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2001
1
June, 2000 – Rev. 1
Publication Order Number:
BC636/D