BC307B Datasheet, PDF (3/4 Pages) ON Semiconductor – Amplifier Transistors PNP Silicon

BC307B
TYPICAL CHARACTERISTICS
2.0
1.5
V_CE = −10 V
T_A = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I_C, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−1.0
−0.9 ^TA ^{= 25°C}
−0.8
V_BE(sat) @ I_C/I_B = 10
−0.7
V_BE(on) @ V_CE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
−0.1 −0.2
V_CE(sat) @ I_C/I_B = 10
−0.5 −1.0 −2.0 −5.0 −10 −20
I_C, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
400
300
200
150
V_CE = −10 V
T_A = 25°C
100
80
60
40
30
20
−0.5
−1.0 −2.0 −3.0 −5.0 −10
−20 −30 −50
I_C, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
10
C_ib
7.0
5.0
T_A = 25°C
3.0
C_ob
2.0
1.0
−0.4 −0.6
−1.0 −2.0 −4.0 −6.0 −10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
−20 −30 −40
1.0
0.5 V_CE = −10 V
0.3
f = 1.0 kHz
T_A = 25°C
0.1
0.05
0.03
0.01
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0
−10
I_C, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
150
140
V_CE = −10 V
f = 1.0 kHz
130
T_A = 25°C
120
110
100
−0.1 −0.2 −0.3 −0.5
−1.0 −2.0 −3.0 −5.0 −10
I_C, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
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