BC307B Datasheet, PDF (2/4 Pages) ON Semiconductor – Amplifier Transistors PNP Silicon

BC307B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −2.0 mAdc, I_B = 0)
V_(BR)CEO
−45
−
Emitter −Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
V_(BR)EBO
−5.0
−
Collector−Emitter Leakage Current
(V_CES = −50 V, V_BE = 0)
(V_CES = −50 V, V_BE = 0) T_A = 125°C
I_CES
−
−0.2
−
−0.2
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
(I_C = −2.0 mAdc, V_CE = −5.0 Vdc)
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −0.5 mAdc)
(I_C = −10 mAdc, I_B = see Note 1)
(I_C = −100 mAdc, I_B = −5.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −0.5 mAdc)
(I_C = −100 mAdc, I_B = −5.0 mAdc)
Base−Emitter On Voltage
(I_C = −2.0 mAdc, V_CE = −5.0 Vdc)
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
−
200
−
−
−
−
−
−
−0.55
150
290
180
−0.10
−0.30
−0.25
−0.7
−1.0
−0.62
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mAdc, V_CE = −5.0 Vdc, f = 100 MHz)
f_T
−
280
Common Base Capacitance
(V_CB = −10 Vdc, I_C = 0, f = 1.0 MHz)
C_cbo
−
−
Noise Figure
(I_C = −0.2 mAdc, V_CE = −5.0 Vdc, R_S = 2.0 kW, f = 1.0 kHz)
NF
−
2.0
1. I_C = −10 mAdc on the constant base current characteristic, which yields the point I_C = −11 mAdc, V_CE = −1.0 V.
Max
Unit
−
Vdc
−
Vdc
−15
nAdc
−4.0
mA
−
−
460
−
Vdc
−0.3
−0.6
−
Vdc
−
−
−0.7
Vdc
−
MHz
6.0
pF
10
dB
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