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ATP203 Datasheet, PDF (3/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP203
ID -- VDS
75
70
4.5V
Tc=25°C
65
60
55
4.0V
50
45
40
35
30
25
VGS=3.5V
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT14000
RDS(on) -- VGS
25
Tc=25°C
Single pulse
20
ID=19A
38A
15
10
5
100
VDS=10V
90
ID -- VGS
80
70
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT14001
RDS(on) -- Tc
25
Single pulse
20
15
10
VVGGSS==41.50V.0,VID, I=D1=93A8A
5
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V IT14002
| yfs | -- ID
7
5
VDS=10V
3
2
25°C
10
7
Tc=
--25°C
75°C
5
3
2
1.0
7
5
3
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- A
IT14004
SW Time -- ID
1000
7
VDD=20V
VGS=10V
5
3
2
td(off)
100
7
tf
5
3
tr
2
td(on)
10
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- A
IT14006
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
100
7
5
VGS=0V
3 Single pulse
2
IS -- VSD
IT14003
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14005
Ciss, Coss, Crss -- VDS
7
f=1MHz
5
3
Ciss
2
1000
7
5
3
2
Coss
Crss
100
7
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14007
No. A1318-3/7