ATP203 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP203
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=38A
ID=38A, VGS=10V
ID=19A, VGS=4.5V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=75A
IS=75A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=38A
RL=0.39Ω
D
VOUT
ATP203
P.G
50Ω
S
Ratings
Unit
min
typ
max
30
V
1
μA
±10
μA
1.2
2.6
V
13
22
S
6.3
8.2 mΩ
9.5
13.5 mΩ
2750
pF
450
pF
265
pF
24
ns
420
ns
130
ns
75
ns
44
nC
14
nC
5.6
nC
1.02
1.2
V
Ordering Information
Device
ATP203-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1318-2/7