AMIS42675ICAA1RG Datasheet, PDF (3/12 Pages) ON Semiconductor – High Speed Low Power CANTransceiver for Long Wire

AMIS−42675
Table 2. PIN DESCRIPTION
Pin Name
Description
1
TxD Transmit Data Input; Low Input → Dominant Driver; Internal Pullup Current
2
GND Ground
3
V_CC Supply Voltage
4
RxD Receive Data Output; Dominant Transmitter → Low Output
5 V_SPLIT Common−Mode Stabilization Output
6 CANL Low−Level CAN Bus Line (Low in Dominant Mode)
7 CANH High−Level CAN Bus Line (High in Dominant Mode)
8
STB Standby Mode Control Input
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
V_CC
V_CANH
Supply Voltage
DC Voltage at Pin CANH
0 < V_CC < 5.25 V; No Time
Limit
−0.3
−50
+7
V
+50
V
V_CANL
DC Voltage at Pin CANL
0 < V_CC < 5.25 V; No Time
−50
Limit
+50
V
V_SPLIT
DC Voltage at Pin V_SPLIT
0 < V_CC < 5.25 V; No Time
−50
Limit
+50
V
V_TxD
V_RxD
V_STB
V_tran(CANH)
V_tran(CANL)
V_tran(VSPLIT)
V_esd(
DC Voltage at Pin TxD
DC Voltage at Pin RxD
DC Voltage at Pin STB
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Transient Voltage at Pin V_SPLIT
Electrostatic Discharge Voltage at all
Pins
Note 2
Note 2
Note 2
Note 4
Note 5
−0.3
−0.3
−0.3
−300
−300
−300
−5
−750
V_CC + 0.3
V
V_CC + 0.3
V
V_CC + 0.3
V
+300
V
+300
V
+300
V
+5
kV
+750
V
Latch−up
Static Latch−up at All Pins
Note 4
120
mA
T_stg
Storage Temperature
−55
+150
°C
T_A
Ambient Temperature
−40
+125
°C
T_J
Maximum Junction Temperature
−40
+170
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: Static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
R_{th(vj−a)}
R_{th(vj−s)}
Thermal Resistance from Junction−to−Ambient in SOIC−8 Package
Thermal Resistance from Junction−to−Substrate of Bare Die
Conditions
Value
Unit
In Free Air
145
k/W
In Free Air
45
k/W
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