AMIS42675ICAA1RG Datasheet, PDF (2/12 Pages) ON Semiconductor – High Speed Low Power CANTransceiver for Long Wire

AMIS−42675
Table 1. TECHNICAL CHARACTERISTICS
Symbol
Parameter
Condition
V_CC
V_STB
V_TxD
V_RxD
V_CANH
V_CANL
V_SPLIT
V_{O(dif)(bus_dom)}
Power Supply Voltage
DC Voltage at Pin STB
DC Voltage at Pin TxD
DC Voltage at Pin RxD
DC Voltage at Pin CANH
DC Voltage at Pin CANL
DC Voltage at Pin V_SPLIT
Differential Bus Output Voltage in
Dominant State
0 < V_CC < 5.25 V; No Time Limit
0 < V_CC < 5.25 V; No Time Limit
0 < V_CC < 5.25 V; No Time Limit
42.5 W < R_LT < 60 W
CM−range
Input Common−Mode Range for
Comparator
Guaranteed Differential Receiver Threshold
and Leakage Current
V_CM−peak
Common−Mode Peak
Note 1
C_load
Load Capacitance on IC Outputs
t_{pd(rec−dom)}
Propagation Delay TxD to RxD
See Figure 4
t_{pd(dom−rec)}
Propagation Delay TxD to RxD
See Figure 4
V_CM−step
Common−Mode Step
Note 1
T_junc
Junction Temperature
1. The parameters V_CM−peak and V_CM−step guarantee low EME.
V_CC
VCC _{AMIS−42675}
POR
1
TxD
VCC
Thermal
shutdown
3
7
VCC
V_SPLIT
5
Max
4.75
−0.3
−0.3
−0.3
−35
−35
−35
1.5
Max
5.25
V_CC
V_CC
V_CC
+35
+35
+35
3
Unit
V
V
V
V
V
V
V
V
−35 +35 V
−500 500 mV
15
pF
70
230 ns
100 245 ns
−150 150 mV
−40 150 °C
CANH
V_SPLIT
8
STB
Mode &
wake −up
control
Driver
control
6 _CANL
4
RxD
GND ²
Wake −up
Filter
COMP
COMP
Figure 1. Block Diagram
PC20071005.2
http://onsemi.com
2