AMIS-30660 Datasheet, PDF (3/10 Pages) AMI SEMICONDUCTOR – High Speed CAN Transceiver

AMIS−30660
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
V_CC
V_CANH
Supply Voltage
DC Voltage at Pin CANH
0 < V_CC < 5.25 V;
No Time Limit
−0.3
+7
V
−45
+45
V
V_CANL
DC Voltage at Pin CANL
0 < V_CC < 5.25 V;
No Time Limit
−45
+45
V
V_TxD
V_RxD
V_S
V_ref
V_tran(CANH)
V_tran(CANL)
V_esd
DC Voltage at Pin TxD
DC Voltage at Pin RxD
DC Voltage at Pin S
DC Voltage at Pin V_REF
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Electrostatic Discharge Voltage at All Pins
(Note 2)
(Note 2)
(Note 3)
(Note 5)
−0.3 V_CC + 0.3
V
−0.3 V_CC + 0.3
V
−0.3 V_CC + 0.3
V
−0.3 V_CC + 0.3
V
−150
+150
V
−150
+150
V
−4
+4
kV
−500
+500
V
Latchup
Static Latchup at All Pins
(Note 4)
100
mA
T_stg
Storage Temperature
−55
+155
°C
T_amb
Ambient Temperature
−40
+125
°C
T_Junc
Maximum Tunction Temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
R_{th(vj−a)}
Thermal Resistance from Junction−to−Ambient in SOIC−8
Package
R_th(vj−s)
Thermal resistance from Junction−to−Substrate of Bare Die
Conditions
In Free Air
In Free Air
Value
Unit
150
K/W
45
K/W
VBAT
IN
OUT
5V−reg
PC20040918.2
VCC
CAN
controller
GND
60 W 60 W
S
8
RxD
4
TxD
1
VCC
3
7 ^CANH
AMIS−
30660
5 ^Vref
6 ^CANL
2
GND
47 nF
CAN
BUS
60 W
60 W
47 nF
Figure 2. Application Diagram
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