2SC6097 Datasheet, PDF (3/9 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SC6097
IC -- VCE
5.0
4.5
100mA
4.0
80mA
3.5
60mA
3.0
40mA
2.5
2.0
1.5
1.0
0.5
0
0
1000
7
5
20mA
10mA
5mA
2mA
IB=0mA
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT11046
hFE -- IC
VCE=2V
Ta=75_°C
25°C
--25°C
3
3.0
VCE=2V
2.5
IC -- VBE
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT11047
fT -- IC
7
VCE=10V
5
3
2
2
100
7
5
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
23 5
Collector Current, IC -- A
IT11048
Cob -- VCB
7
f=1MHz
5
3
2
10
7
5
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Collector-to-Base Voltage, VCB -- V IT11050
VCE(sat) -- IC
5
IC / IB=20
3
2
100
7
5
3
2
0.01
2 3 5 7 _0.1
2 3 5 7 _1.0
23
Collector Current, IC -- A
IT11049
VCE(sat) -- IC
5
IC / IB=10
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.01
3
23
Ta=75^°_-C-25°C
25^°C
5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
VBE(sat) -- IC
23 5
IT11051
IC / IB=10
2
0.1
7
5
3
2
0.01
7
5
0.01
Ta=75^°C--25°^C
25^°C
2 3 5 7 _0.1 2 3 5 7 _1.0
Collector Current, IC -- A
23 5
IT11052
1.0
Ta= ^--25°C
7
75^°C
25°^C
5
3
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
23 5
Collector Current, IC -- A
IT11053
No. A0412-3/9