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2SC6097 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
Ordering number : ENA0412A
2SC6097
Bipolar Transistor
60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
http://onsemi.com
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
• Adoption of FBET, MBIT process
• Low collector-to-emitter saturation voltage
• High allowable power dissipation
• Large current capacity
• High-speed switching
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
100
V
100
V
60
V
6.5
V
3
A
5
A
600 mA
Continued on next page.
Package Dimensions unit : mm (typ)
7518-003
Package Dimensions unit : mm (typ)
7003-003
6.5
2.3
6.5
5.0
0.5 2SC6097-E
5.0
4
4
2.3
0.5
2SC6097-TL-E
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
C6097
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
1
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/70306/53006EA MSIM TB-00002348 No. A0412-1/9