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2SC5658M3T5G Datasheet, PDF (3/4 Pages) Vaishali Semiconductor – NPN Silicon General Purpose Amplifier Transistor
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2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
60
TA = 25°C
50
40
30
20
10
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
IB = 20 mA
0
0
2
4
6
8
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − VCE
1000
100
10
0.1
TA = 75°C
TA = 25°C
TA = - 25°C
VCE = 10 V
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
TA = 25°C
1.5
1
0.5
0
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
20
900
800
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.2 0.5 1 5 10 20 40 60 80 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
7
18
6
5
16
4
14
3
12
2
10
1
0
1
2
3
4
0
10
20
30
40
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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