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2SC5658M3T5G Datasheet, PDF (2/4 Pages) Vaishali Semiconductor – NPN Silicon General Purpose Amplifier Transistor
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2SC5658M3T5G, 2SC5658RM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
5.0
−
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
−
−
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage (Note 2)
(IC = 60 mAdc, IB = 5.0 mAdc)
IEBO
−
−
VCE(sat)
−
−
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
2SC5658M3T5G
2SC5658RM3T5G
120
−
215
−
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)
COB
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
−
180
−
2.0
Max
Unit
−
Vdc
−
Vdc
−
Vdc
0.5
mA
0.5
mA
Vdc
0.4
−
560
375
−
MHz
−
pF
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