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| 2N6040_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – Plastic Medium−Power Complementary Silicon Transistors | |||
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PNP â 2N6040, 2N6042, NPN â 2N6043, 2N6045
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
â30 V
1N5825 USED ABOVE IB â 100 mA
MSD6100 USED BELOW IB â 100 mA
RC
TUT
SCOPE
V2
approx
RB
+8.0 V
0
51
D1
â 8.0 k â 120
V1
approx
â12 V
25 ms
tr, tf ⤠10 ns
DUTY CYCLE = 1.0%
+4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
Figure 2. Switching Times Equivalent Circuit
5.0
3.0
ts
2.0
1.0
tf
0.7
0.5
0.3
0.2
VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.07
PNP
0.05
NPN
0.1
0.2 0.3
td @ VBE(off) = 0 V
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
tr
5.0 7.0 10
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
qJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) â TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
100 200 300 500 1000
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