2N6040_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Plastic Medium−Power Complementary Silicon Transistors

PNP − 2N6040, 2N6042,
NPN − 2N6043, 2N6045
2N6043 and 2N6045 are Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain − h_FE = 2500 (Typ) @ I_C = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
V_CEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 2.0 Vdc (Max) @ I_C = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ I_C = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (Note 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
2N6040 V_CEO
60
Vdc
2N6043
2N6042
100
2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
2N6040 V_CB
2N6043
2N6042
2N6045
60
Vdc
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
V_EB
Continuous
I_C
Peak
5.0
Vdc
8.0
Adc
16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
Derate above 25°C
I_B
120
mAdc
P_D
75
W
0.60
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg –65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
http://onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
TO−220AB
1
CASE 221A−09
STYLE 1
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 7
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6040/D