2N5191 Datasheet, PDF (3/8 Pages) ON Semiconductor – POWER TRANSISTORS SILICON NPN

2N5191 2N5192
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
+ā2.5
+ā2.0
+ā1.5
*APPLIES FOR IC/IB ≤
hFEĂ@ĂVCEĂ +Ă 2.0ĂV
2
TJ = -ā65°C to +150°C
+ā1.0
+ā0.5
*θ_V for VCE(sat)
0
-ā0.5
-ā1.0
-ā1.5
θ_V for VBE
-ā2.0
-ā2.5
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Temperature Coefficients
103
VCE = 30 V
102
101
TJ = 150°C
100
100°C
10-1
REVERSE
FORWARD
10-ā2
25°C
10-ā3
-ā0.4 -ā0.3 -ā0.2 -ā0.1
ICES
0 +ā0.1 +ā0.2 +ā0.3 +ā0.4 +ā0.5 +ā0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cut–Off Region
107
IC = 10 x ICES
106
105 ^{IC ≈ ICES}
IC = 2 x ICES
104
VCE = 30 V
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
102
20
40
60
80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Effects of Base–Emitter Resistance
TURN-ON PULSE
APPROX
VCC
RC
+11 V
Vin
RB
SCOPE
Vin 0
VEB(off)
t1
t3
CjdĂ<<ĂCeb
-ā4.0 V
APPROX
+11 V
Vin
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
RB and RC varied
to obtain desired
current levels
t2
TURN-OFF PULSE
DUTY CYCLE ≈ 2.0%
APPROX -ā9.0 V
Figure 7. Switching Time Equivalent Test Circuit
300
TJ = +ā25°C
200
100
Ceb
70
50
Ccb
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
20 30 40
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