|
2N5191 Datasheet, PDF (2/8 Pages) ON Semiconductor – POWER TRANSISTORS SILICON NPN | |||
|
◁ |
2N5191 2N5192
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *ELECTRICAL CHARACTERISTICS â continued (TC = 25_C unless otherwise noted)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ON CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DC Current Gain (2)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.5 Adc, VCE = 2.0 Vdc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
2N5191
25
2N5192
20
2N5191
10
2N5192
7.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Saturation Voltage (2)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.5 Adc, IB = 0.15 Adc)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
â
â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ BaseâEmitter On Voltage (2)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ DYNAMIC CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CurrentâGain â Bandwidth Product
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
Max
Unit
â
100
80
â
â
Vdc
0.6
1.4
1.2
Vdc
â
MHz
(2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
*Indicates JEDEC Registered Data.
10
7.0
TJ = 150°C
5.0
3.0
2.0
1.0
0.7
0.5
25°C
-Ä55°C
0.3
0.2
0.1
0.004 0.007 0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
VCE = 2.0 V
VCE = 10 V
2.0 3.0 4.0
2.0
TJ = 25°C
1.6
1.2
IC = 10 mA
0.8
100 mA
1.0 A
3.0 A
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
50 70 100
200 300 500
http://onsemi.com
2
|
▷ |