STK534U362C-E Datasheet, PDF (2/15 Pages) ON Semiconductor – Intelligent Power Module (IPM)

STK534U362C-E
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Test
circuit
MIN
TYP
MAX Unit
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
Collector to emitter saturation voltage
Diode forward voltage
Junction to case thermal resistance
ICE
IR(BD)
VCE = 600 V
VR(BD) = 600 V
VCE(SAT)
Ic = 10 A, Tj=25C
Ic = 5 A, Tj=100C
IF = 10 A, Tj=25C
VF
IF = 5 A, Tj=100C
θj-c(T) IGBT
θj-c(D) FWD
-
Fig.1
-
-
Fig.2
-
Fig.3
-
-
-
-
100
μA
-
100
μA
1.6
2.4
V
1.4
-
1.4
2.1
V
1.2
-
-
4
-
6
C /W
Control (Pre-driver) section
Pre-driver power dissipation
ID
High level Input voltage
Low level Input voltage
Logic 1 input leakage current
Logic 0 input leakage current
FLTEN terminal sink current
Vin H
Vin L
I_IN+
I_IN-
IoSD
FLTEN clearance delay time
FLTCLR
FLTEN Threshold
ITRIP threshold voltage
ITRIP to shutdown propagation delay
ITRIP blanking time
V_CC and V_BS supply undervoltage protection reset
V_CC and V_BS supply undervoltage protection set
V_CC and V_BS supply undervoltage hysteresis
VEN+
VEN-
VITRIP
t_ITRIP
t_ITRIPBL
V_CCUV+
V_BSUV+
V_CCUV-
V_BSUV-
V_CCUVH
V_BSUVH
VD1,2,3 = 15 V
VD4 = 15 V
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3 to VSS
VIN = +3.3 V
VIN = 0 V
FAULT:ON / VFLTEN=0.1V
From time fault condition
clear
VEN rising
VEN falling
ITRIP(16) to VSS(29)
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Fig.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-
-
-
-
1.0
-
0.8
0.44
340
250
10.5
10.3
0.14
0.08
1.6
-
-
100
-
2
2.0
-
-
0.49
550
350
11.1
10.9
0.2
0.4
mA
4
-
V
0.8
V
143
μA
2
μA
-
mA
3.0
ms
2.5
V
-
V
0.54
V
800
ns
-
ns
11.7
V
11.5
V
-
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2