STD5407N Datasheet, PDF (2/6 Pages) ON Semiconductor – 40 V, 38 A, Single N-Channel, DPAK

NTD5407N, STD5407N
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
40
Drain−to−Source Breakdown Voltage V_(BR)DSS/T_J
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = 40 V
T_J = 25°C
T_J = 100°C
V_DS = 0 V, V_GS = ±30 V
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
V_GS(TH)
V_GS = V_DS, I_D = 250 mA
1.5
V_GS(TH)/T_J
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
R_DS(on)
g_FS
V_GS = 10 V, I_D = 20 A
V_GS = 5.0 V, I_D = 10 A
V_GS = 10 V, I_D = 18 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_GS = 0 V, f = 1.0 MHz,
V_DS = 32 V
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q_G(TOT)
Q_GS
Q_GD
V_GS = 10 V, V_DS = 32 V,
I_D = 38 A
SWITCHING CHARACTERISTICS, V_GS = 10 V (Note 3)
Turn−On Delay Time
t_d(ON)
Rise Time
Turn−Off Delay Time
t_r
t_d(OFF)
V_GS = 10 V, V_DD = 32 V,
I_D = 38 A, R_G = 2.5 W
Fall Time
t_f
SWITCHING CHARACTERISTICS, V_GS = 5 V (Note 3)
Turn−On Delay Time
t_d(ON)
Rise Time
Turn−Off Delay Time
t_r
t_d(OFF)
V_GS = 5 V, V_DD = 20 V,
I_D = 20 A, R_G = 2.5 W
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 5.0 A
T_J = 125°C
Reverse Recovery Time
t_RR
Charge Time
Discharge Time
t_a
V_GS = 0 V, dI_S/dt = 100 A/ms,
t_b
I_S = 15 A
Reverse Recovery Charge
Q_RR
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
39
mV/°C
1.0
mA
10
±100
nA
3.5
V
−6.0
mV/°C
21
26
mW
32
40
15
S
615
1000
pF
173
80
20
nC
2.25
10.5
6.8
ns
17
66
51
10
ns
175
13
23
0.9
1.1
V
0.75
38
ns
20.5
17
40
nC
http://onsemi.com
2