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| SMF05 Datasheet, PDF (2/5 Pages) Semtech Corporation – TVS Diode Array For ESD and Latch-Up Protection | |||
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SMF05T1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS
Breakdown
Voltage
VBR @ 1 mA
(V)
Device Min Max
SMF05 6.0
7.2
Leakage
Current
IR @ VRWM =
5 V (mA)
Max
5.0
Capacitance
@ 0 V Bias
(pF)
Max
90
Max VF @
IF = 200 mA
(V)
1.25
Max Clamping
Voltage (VC)
@ IPP (Note 2)
IPP (A) VC (V)
1.0
9.5
Max Clamping
Voltage (VC)
@ IPP (Note 2)
IPP (A) VC (V)
12
12.5
VC
Per IEC61000â4â2
(Note 3)
Figures 1 and 2
See Below
2. Nonârepetitive current per Figure 5. Derate per Figure 6.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000â4â2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000â4â2
http://onsemi.com
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