SBS817 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Low VF Schottky Barrier Diode 15V, 2.0A Rectifier

SBS817
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=1mA
IF=1.0A
IF=2.0A
VR=7.5V
VR=10V, f-1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm²Ã—0.8mm)
min
15
Ratings
typ
0.33
0.39
35
65
max
0.39
0.46
300
10
Unit
V
V
V
μA
pF
ns
°C / W
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3
and Terminal 5 (or 6).
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
trr
Ordering Information
Device
SBS817-TL-E
Package
EMH8
Shipping
3,000pcs./reel
memo
Pb Free
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
IF -- VF
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Forward Voltage, VF -- V
IT12192
1.0E+05
1.0E+04
1.0E+03
1.0E+02
IR -- VR
Ta=125^°C
100°C
75°C
50°C
25°C
1.0E+01
1.0E+00
0°C
--25°C
1.0E-01
0
2
4
6
8
10
12
14
16
Reverse Voltage, VR -- V
IT12193
No. A0734-2/6