English
Language : 

SBS817 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low VF Schottky Barrier Diode 15V, 2.0A Rectifier
Ordering number : ENA0734A
SBS817
Schottky Barrier Diode
15V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode
http://onsemi.com
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
• Low switching noise
• Low forward voltage (IF=2.0A, VF max=0.46V)
• Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
Unit
15
V
15
V
2.0
A
20
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-004
0.2
8
5
0.125 SBS817-TL-E
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
EMH8
TL
Electrical Connection
8765
SB
Lot No.
1234
Semiconductor Components Industries, LLC, 2013
September, 2013
71812 TKIM/62508SB TIIM TC-00001462 No. A0734-1/6