SBE812 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – Schottky Barrier Diode 60V, 1.0A Rectifier

SBE812
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
Conditions
IR=0.2mA
IF=1A
VR=30V
VR=10V, f=1MHz
IF=100mA, See specified Test Circuit.
When Mounted in Cu-foiled area of 1.92mm²Ã—0.03mm
on glass epoxy substrate
When mounted on ceramic substrate (1000mm²Ã—0.8mm)
min
60
Ratings
typ
0.55
35
80
75
Unit
max
V
0.60
V
30
μA
pF
10
ns
°C / W
°C / W
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
trr
Ordering Information
Device
SBE812-TL-E
Package
VEC8
Shipping
3,000pcs./reel
memo
Pb Free
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
IF -- VF
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward Voltage, VF -- V
IT10113
10000
1000
100
10
1.0
0.1
0.01
0.001
0
IR -- VR
Ta=125^°C
100^°C
75°^C
50^°C
25^°C
0°^C
--25^°C
10
20
30
40
50
60
70
Reverse Voltage, VR -- V
IT10114
No.8966-2/6