SBE812 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Schottky Barrier Diode 60V, 1.0A Rectifier

Ordering number : EN8966A
SBE812
Schottky Barrier Diode
60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
http://onsemi.com
Applications
• _{High frequency rectification (switching regulators, converters, choppers)}
Features
• _{Small switching noise}
• _{Low leakage current and high reliability due to highly reliable planar structure}
• _{Ultrasmall package allows applied sets to be made small and thin}
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
I_O
I_FSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
Ratings
Unit
60
V
65
V
1.0
A
10
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-001
0.3
8 7 65
0.15 _SBE812-TL-E
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
VEC8
SA
LOT No.
TL
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
September, 2013
91912 TKIM/D2605SB MSIM TB-00002015 No.8966-1/6