SBE807 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Schottky Barrier Diode 30V, 1.0A Rectifier

SBE807
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.2mA
IF=0.7A
IF=1.0A
VR=16V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm²Ã—0.8mm)
min
30
Ratings
typ
0.45
0.48
27
111
max
0.50
0.53
15
10
Unit
V
V
V
mA
pF
ns
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Circuit
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
Ordering Information
Device
SBE807-TL-E
SBE807-TL-W
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
3
IF -- VF
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 _{Rweacvteangular}
0.7
Forward Voltage, VF -- V
PF(AV) -- IO
IT09553
θ
360°
(1) (2) (4)(3) (5)
0.6 Swianvee
0.5
180°
360°
0.4
0.3
0.2
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.1
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0
(5)DC
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Average Output Current, IO -- A
IT13283
10000
5
1000
5
100
5
10
5
1.0
5
0.1
5
0.01
5
0.001
5
0.0001
0
150
125
100
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25^°C
5
10
15
20
25
30
35
Reverse Voltage, VR -- V
Ta -- IO
IT09554
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
75
50
(4)
(1) (2) (3) (5)
25
0
0
0.2
0.4
0.6 0.76 0.8 0.95 1.0 1.05 1.2
1.4
Average Output Current, IO -- A
IT13284
No. A1055-2/4