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SBE807 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Schottky Barrier Diode 30V, 1.0A Rectifier
Ordering number : ENA1055B
SBE807
Schottky Barrier Diode
30V, 1A, Low IR
http://onsemi.com
Applications
• High frequency rectification (switching regulators, converters, and choppers)
Features
• Low switching noise
• Low reverse current (VR=16V, IR max=15µA)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
Storage Temperature
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
Unit
30
V
35
V
1.0
A
10
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7017A-001
2.9
5 43
1
0.95
2
0.4
0.15
SBE807-TL-E
SBE807-TL-W
0.05
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
CPH5
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
Electrical Connection
5
4
3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
31814HK TC-00002874/91912TKIM/22708TIIM SB No. A1055-1/4