SBAW56WT1G Datasheet, PDF(2/4 Page) ON Semiconductor – Dual Switching Diode, Common Anode

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SBAW56WT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Switching Diode, Common Anode

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BAW56WT1G, SBAW56WT1G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 mA)

Reverse Voltage Leakage Current

(VR = 25 V, TJ = 150ï°C)

(VR = 70 V)

(VR = 70 V, TJ = 150ï°C)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 60 mA)

(IF = 150 mA)

Reverse Recovery Time

(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)

Symbol

Min

V(BR)

trr

Max

2.5

2.0

715

855

1000

1250

6.0

Unit

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 W OUTPUT

PULSE

GENERATOR

0.1 mF

10%

50 W INPUT

SAMPLING

OSCILLOSCOPE

90%

INPUT SIGNAL

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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