SBAS40-06LT1G Datasheet, PDF(2/3 Page) ON Semiconductor – Common Anode Schottky Common Anode Schottky

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

SBAS40-06LT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Common Anode Schottky Common Anode Schottky

◁

BAS40â06LT1G, SBAS40â06LT1G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage

(VR = 25 V)

Forward Voltage

(IF = 1.0 mAdc)

Forward Voltage

(IF = 10 mAdc)

Forward Voltage

(IF = 40 mAdc)

Max

Unit

5.0

mAdc

1.0

mVdc

380

mVdc

500

Vdc

1.0

100

150ï°C

1.0 1â25ï°C

85ï°C

25ï°C

0.1

0.1 0.2

-â40ï°C -â55ï°C

0.3 0.4 0.5 0.6 0.7 0.8

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

100

TA = 150ï°C

125ï°C

1.0 85ï°C

0.1

0.01 25ï°C

0.001

5.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0 5.0 10 15 20 25 30 35 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

http://onsemi.com

▷