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| RB751V40T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – 40 V SCHOTTKY BARRIER DIODE | |||
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RB751V40T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
30
â
â
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
(VR = 30 V)
Forward Voltage
(IF = 1.0 mAdc)
CT
â
2.0
2.5
pF
IR
â
300
500
nAdc
VF
â
0.28
0.37
Vdc
820 â¦
+10 V
2k
100 µH IF
0.1 µF
DUT
50 ⦠OUTPUT
PULSE
GENERATOR
0.1 µF
tr
tp
10%
IF
t
50 ⦠INPUT
SAMPLING
90%
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k⦠variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
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