RB751V40T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – 40 V SCHOTTKY BARRIER DIODE

RB751V40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage – 0.28 Volts (Typ) @ I_F = 1 mAdc
• Low Reverse Current
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Reverse Voltage
Electrostatic Discharge
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) T_A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
1. FR–5 Minimum Pad
Symbol
V_RM
V_R
E_SD
Value Unit
40
V
30
Vdc
HBM Class: 1C
MM Class: A
Symbol Max Unit
P_D
200 mW
R_qJA
T_J, T_stg
1.57 mW/°C
635 °C/W
–55 to °C
+150
1
CATHODE
2
ANODE
1
2
SOD–323
CASE 477
PLASTIC
MARKING DIAGRAMS
5E M
5E = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
RB751V40T1 SOD–323 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 1
Publication Order Number:
RB751V40T1/D