RB520S30T1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

RB520S30T1G, RB520S30T5G
820 W
+10 V
2k
100 mH
I_F
0.1 mF
0.1 mF
t
t_p
t
I_F
r
10%
t_rr
t
50 W Output
Pulse
Generator
DUT
50 W Input
Sampling
Oscilloscope
90%
V_R
INPUT SIGNAL
i_R(REC) = 1 mA
I_R
OUTPUT PULSE
(I_F = I_R = 10 mA; measured
at i_R(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I_F) of 10 mA.
Notes: 2. Input pulse is adjusted so I_R(peak) is equal to 10 mA.
Notes: 3. t_p » t_rr
Figure 1. Recovery Time Equivalent Test Circuit
200
100
1 50°C
10
1 25°C
1.0
85°C
25°C _{− 40°C}
− 55°C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1000
T_A = 150°C
100
10
T_A = 125°C
1.0
T_A = 85°C
0.1
0.01
0.001
0.6
0
T_A = 25°C
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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